JAEA
  • help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Search Results: Records 1-20 displayed on this page of 34

Presentation/Publication Type

Initialising ...

Refine

Journal/Book Title

Initialising ...

Meeting title

Initialising ...

First Author

Initialising ...

Keyword

Initialising ...

Language

Initialising ...

Publication Year

Initialising ...

Held year of conference

Initialising ...

Save select records

Journal Articles

Oxidation mechanisms of hafnium overlayers deposited on an Si(111) substrate

Kakiuchi, Takuhiro*; Matoba, Tomoki*; Koyama, Daisuke*; Yamamoto, Yuki*; Yoshigoe, Akitaka

Langmuir, 38(8), p.2642 - 2650, 2022/03

https://doi.org/10.1021/acs.langmuir.1c02711
 Times Cited Count：1 Percentile：13.58(Chemistry, Multidisciplinary)

0xidation processes at the interface and the surface of Si(111) substrate with thin Hf films were studied using photoelectron spectroscopy in conjunction with supersonic oxygen molecular beams (SOMB). The oxidation starts at the outermost Hf layers and produces stoichiometric HfO$$_{2}$$. Hf silicates (Hf-O-Si configuration) were generated in the vicinity of the HfO$$_{2}$$/Si interface in the case of the irradiation of 2.2 eV SOMB. The oxidation of the Si substrate takes place to generate SiO$$_{2}$$ compounds. Si atoms were emitted from the SiO$$_{2}$$/Si interface region underneath the HfO$$_{2}$$ overlayers to release the stress generated within the strained Si layers. The emitted Si atoms can pass through the HfO$$_{2}$$ overlayers and react with the impinging O$$_{2}$$ gas.

Journal Articles

Precise chemical state analyses of ultrathin hafnium films deposited on clean Si(111)-7$$times$$7 surface using high-resolution core-level photoelectron spectroscopy

Kakiuchi, Takuhiro*; Matoba, Tomoki*; Koyama, Daisuke*; Yamamoto, Yuki*; Kato, Daiki*; Yoshigoe, Akitaka

Surface Science, 701, p.121691_1 - 121691_8, 2020/11

https://doi.org/10.1016/j.susc.2020.121691
 Times Cited Count：1 Percentile：5.82(Chemistry, Physical)

Ultrathin hafnium films on Si(111)-7$$times$$7 were studied using synchrotron radiation photoelectron spectroscopies to reveal the chemical states at interface and surface. Ultrathin Hf layers grow on clean Si(111)-7$$times$$7 surface by lever rule. Surface and interface of Hf/Si(111) contain three components (metallic Hf layers, Hf monosilicide (HfSi) and Si-rich Hf silicide). Ultrathin Hf layers changes HfSi$$_{2}$$ islands on bared Si(111)-7$$times$$7 surface after annealing at 1073 K. It was found that the long axes of the rectangle islands expand the direction connecting the corner holes in DAS model of clean Si(111)-7$$times$$7 surface.

Journal Articles

Initial oxidation processes of ultrathin hafnium film and hafnium disilicide islands on Si(100)-2$$times$$1 surfaces studied using core-level X-ray photoelectron spectroscopy

Kakiuchi, Takuhiro*; Yamasaki, Hideki*; Tsukada, Chie*; Yoshigoe, Akitaka

Surface Science, 693, p.121551_1 - 121551_8, 2020/03

https://doi.org/10.1016/j.susc.2019.121551
 Times Cited Count：3 Percentile：19.14(Chemistry, Physical)

We investigated the initial oxidation of ultrathin hafnium (Hf) film on Si(100)-2$$times$$1 using photoelectron spectroscopy. Metallic Hf rapidly oxidized, transforming into hafnium dioxide (HfO$$_{2}$$) and its suboxides. The other HfSi component at the interface was nearly unreactive with O$$_{2}$$ molecules. These facts suggest that the metallic Hf component plays a vital role in the initial oxidation of the ultrathin Hf/Si(100) film. After annealing from 873 K to 973 K, the Hf suboxides in low ionic valences progressed into fully oxidized HfO$$_{2}$$. Once the annealing temperature reached c.a.1073 K, oxygen atoms were entirely removed from the ultrathin HfO$$_{2}$$/Si(100) film containing SiO$$_{2}$$ at the interface. Simultaneously, ultrathin HfO$$_{2}$$ layers changed into islands of Hf disilicide ($$i$$-HfSi$$_{2}$$) on a bare Si(100)-2$$times$$1 surface. The $$i$$-HfSi$$_{2}$$ component showed slight reactivity with O$$_{2}$$ molecules at 298 K. In contrast to the initial oxidation of clean Si(100)-2$$times$$1 surface, the dangling bonds on bare Si(100)-2$$times$$1 surface among $$i$$-HfSi$$_{2}$$ oxidized preferentially.

Journal Articles

Novel photosensitive materials for hydrogen generation through photovoltaic electricity

Yamaguchi, Kenji; Udono, Haruhiko*

International Journal of Hydrogen Energy, 32(14), p.2726 - 2729, 2007/09

https://doi.org/10.1016/j.ijhydene.2006.09.014
 Times Cited Count：14 Percentile：36.71(Chemistry, Physical)

no abstracts in English

Journal Articles

Effect of thermal annealing on the photoluminescence from $$beta$$-FeSi$$_2$$ films on Si substrate

Yamaguchi, Kenji; Shimura, Kenichiro; Udono, Haruhiko*; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Thin Solid Films, 508(1-2), p.367 - 370, 2006/06

https://doi.org/10.1016/j.tsf.2005.07.354
 Times Cited Count：12 Percentile：49.64(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Characterization of photoluminescence of $$beta$$-FeSi$$_2$$ thin film fabricated on Si and SIMOX substrate by IBSD method

Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Vacuum, 80(7), p.719 - 722, 2006/05

https://doi.org/10.1016/j.vacuum.2005.11.034
 Times Cited Count：9 Percentile：34.26(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Photoluminescence of $$beta$$-FeSi$$_2$$ thin film prepared by ion beam sputter deposition method

Shimura, Kenichiro; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Sasase, Masato*; Shamoto, Shinichi; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.673 - 675, 2006/01

https://doi.org/10.1016/j.nimb.2005.08.175
 Times Cited Count：6 Percentile：43.77(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Modification of thin SIMOX film into $$beta$$-FeSi$$_2$$ via dry processes

Shimura, Kenichiro; Yamaguchi, Kenji; Sasase, Masato*; Yamamoto, Hiroyuki; Shamoto, Shinichi; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 242(1-2), p.676 - 678, 2006/01

https://doi.org/10.1016/j.nimb.2005.08.169
 Times Cited Count：0 Percentile：0.01(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Observation of iron silicide formation by plan-view transmission electron microscopy

Igarashi, Shinichi*; Haraguchi, Masaharu*; Aihara, Jun; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Journal of Electron Microscopy, 53(3), p.223 - 228, 2004/08

https://doi.org/10.1093/jmicro/53.3.223
 Times Cited Count：4 Percentile：24.19(Microscopy)

no abstracts in English

Journal Articles

Effect of target compositions on the crystallinity of $$beta$$-FeSi$$_2$$ prepared by ion beam sputter deposition method

Yamaguchi, Kenji; Heya, Akira*; Shimura, Kenichiro; Katsumata, Toshinobu*; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.17 - 21, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.052
 Times Cited Count：4 Percentile：25.1(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effect of substrate temperature and deposited thickness on the formation of iron silicide prepared by ion beam sputter deposition

Yamaguchi, Kenji; Haraguchi, Masaharu*; Katsumata, Toshinobu*; Shimura, Kenichiro; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.13 - 16, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.051
 Times Cited Count：10 Percentile：46.79(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Nanoscopic observation of structural and compositional changes for $$beta$$-FeSi$$_{2}$$ thin film formation processes

Yamamoto, Hiroyuki; Yamaguchi, Kenji; Hojo, Kiichi

Thin Solid Films, 461(1), p.99 - 105, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.079
 Times Cited Count：10 Percentile：46.79(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

The Role of sputter etching and annealing processes on the formation of $$beta$$-FeSi$$_{2}$$ thin films

Shimura, Kenichiro; Katsumata, Toshinobu*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Thin Solid Films, 461(1), p.22 - 27, 2004/08

https://doi.org/10.1016/j.tsf.2004.02.053
 Times Cited Count：8 Percentile：40.98(Materials Science, Multidisciplinary)

On the formation of $$beta$$-FeSi$$_{2}$$ using Ion Beam Sputter Deposition (IBSD) method, sputter etching (SE) followed by thermal annealing is effective substrate treatment to obtain highly (100) oriented $$beta$$-FeSi$$_{2}$$ on Si (100). However the best condition of these treatments are not yet known. In this work, the effect of sputter etching (SE) together with annealing process on the orientation of the film is investigated. In prior to the deposition of Fe, the substrate is irradiated by Ne$$^{+}$$ ion with various energy and fluence followed by thermal annealing at 1027 K for 60 minuets. The overall results show the most suitable SE condition using Ne$$^{+}$$ ion on IBSD method is the energy of 1keV with the fluence of 30$$times$$10$$^{19}$$ ions/m$$^{2}$$.

Journal Articles

Orientational ordering of iron silicide films on sputter etched Si substrate

Igarashi, Shinichi*; Katsumata, Toshinobu*; Haraguchi, Masaharu*; Saito, Takeru*; Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi

Vacuum, 74(3-4), p.619 - 624, 2004/06

https://doi.org/10.1016/j.vacuum.2004.01.035
 Times Cited Count：6 Percentile：27.8(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Effect of surface treatment of Si substrate on the crystal structure of FeSi$$_{2}$$ thin film formed by ion beam sputter deposition method

Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Nakanoya, Takamitsu; Saito, Takeru; Sasase, Masato*; Hojo, Kiichi

Nuclear Instruments and Methods in Physics Research B, 206, p.313 - 316, 2003/05

https://doi.org/10.1016/S0168-583X(03)00752-3
 Times Cited Count：17 Percentile：72.63(Instruments & Instrumentation)

no abstracts in English

JAEA Reports

Summer Seminar on "Silicide Semiconductors" 2002; August 5-6, 2002, Japan Atomic Energy Research Institute, Tokai Research Establishment

Yamaguchi, Kenji; Yamamoto, Hiroyuki; Hojo, Kiichi; Udono, Haruhiko*

JAERI-Conf 2002-014, 60 Pages, 2003/01

JAERI-Conf-2002-014.pdf:5.35MB

Some silicides are known to be promising as new types of semiconductor, being less hazardous to the environment than conventional compound semiconductors. This seminar was held at Advanced Science Research Center in JAERI (Japan Atomic Energy Research Institute) - Tokai on August 5th and 6th, 2002, where 1 invited lecture, 10 oral and 20 poster presentations were given. It was successfully carried out with the participants reaching as many as 70 people, with plenty of fruitful discussion. This summary is the proceedings of the seminar.

Journal Articles

Development of semiconductor material ($$beta$$-FeSi$$_2$$ film) for next generation using IBSD method

Heya, Akira*; Haraguchi, Masaharu*; Yamamoto, Hiroyuki; Saito, Takeru*; Yamaguchi, Kenji; Hojo, Kiichi

Ishikawaken Kogyo Shikenjo Heisei-14-Nendo Kenkyu Hokoku, (52), p.9 - 12, 2003/00

no abstracts in English

Journal Articles

Surface chemical states and oxidation resistivity of "ecologically friendly" semiconductor ($$beta$$-FeSi$$_{2}$$) thin films

Saito, Takeru; Yamamoto, Hiroyuki; Sasase, Masato*; Nakanoya, Takamitsu; Yamaguchi, Kenji; Haraguchi, Masaharu*; Hojo, Kiichi

Thin Solid Films, 415(1-2), p.138 - 142, 2002/08

https://doi.org/10.1016/S0040-6090(02)00555-2
 Times Cited Count：20 Percentile：67.02(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Fabrication of $$beta$$-FeSi$$_{2}$$ thin films on Si(III) surface by solid phase epitaxy (SPE) analyzed by means of synchrotron radiation XPS (SR-XPS)

Saito, Takeru; Yamamoto, Hiroyuki; Asaoka, Hidehito; Haraguchi, Masaharu*; Imamura, Motoyasu*; Matsubayashi, Nobuyuki*; Tanaka, Tomoaki*; Shimada, Hiromichi*; Hojo, Kiichi

Analytical Sciences (CD-ROM), 17(Suppl.), p.1073 - 1076, 2002/03

no abstracts in English

Journal Articles

Fabrication of highly oriented $$beta$$-FeSi$$_{2}$$ by ion beam sputter deposition

Nakanoya, Takamitsu; Sasase, Masato*; Yamamoto, Hiroyuki; Saito, Takeru; Hojo, Kiichi

Shinku, 45(1), p.26 - 31, 2002/01

https://doi.org/10.3131/jvsj.45.26

no abstracts in English

34 (Records 1-20 displayed on this page)